Flexible nanostructure electronic devices

ABSTRACT

A flexible electronic device is made up of nanostructures. Specifically, the device includes a flexible substrate, a film of nanostructures in contact with the flexible substrate, a first conducting element in contact with the film of nanostructures, and a second conducting element in contact with the film of nanostructures. The nanostructures may comprise nanotubes, such as carbon nanotubes disposed along the flexible substrate, such as an organic or polymer substrate. The first and second conductive elements may serve as electrical terminals, or as a source and drain. In addition, the electronic device may include a gate electrode that is in proximity to the nanotubes and not in electrical contact with the nanotubes. In this configuration, the device can operate as a transistor or a FET. The device may also be operated in a resistive mode as a chemical sensor (e.g., for sensing NH 3 ).

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority pursuant to 35 USC. §120 to applicationSer. No. 10/846,072, filed May 14, 2004, titled “FLEXIBLE NANOSTRUCTUREELECTRONIC DEVICES,” which in turn claims the benefit under 35 U.S.C.§119(e) to U.S. Provisional Application No. 60/471,243, filed May 16,2003, titled “FLEXIBLE NANOTUBE TRANSISTORS,” all of which arespecifically incorporated herein, in their entireties, by thisreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to flexible nanostructure electronicdevices, such as nanotube sensors and transistors, and method forfabricating the same.

2. Description of Related Art

Flexible electronics or transistors are desirable for many applications.These applications include applications in flexible displays, wearableelectronics, intelligent papers, and lightweight/cheap electronics. Tomeet these applications, it is important to have a flexiblesemiconducting channel. Many flexible transistors have been developed byusing organic channels such as semiconducting polymers or organiccrystals (e.g. crystalline pentane). The other elements of thetransistor structures, such as contacts and the gate dielectric, havebeen made from organic materials and from inorganic materials. The coreproblem with these previous developments has been that the organicmaterials have extremely low carrier mobilities. As a result, thetransconductance of these devices has been very small. Sincetransconductance determines the speed of a device, flexible electronicshave been very slow. By contrast, nanotube carrier mobilities areextremely high. Therefore, flexible nanotube electronic devices ortransistors promise to be superior to other flexible electronic devicesor transistors.

Carbon nanotubes have emerged as materials of fundamental importance andgreat potential due to their exceptional electrical, mechanical, andthermal properties. Various proposals exist for their incorporation intodevices based on thin nanotube film architectures and geometries. Verythin nanotube films could be used in fault tolerant sensor networks,thermal heat shunts, as well as for measurements of fundamental nanotubeproperties in cavity and optical experiments. For such applications thepreparation of uniform flat nanotube films is of paramount importance.

However, certain obstacles are encountered in the manipulation of thesenano-electronic or microscopic objects. The laying down of a thin filmof nanotubes is not easily accomplished. One difficulty arises from thefact that nanotubes have a very poor solubility in typical solventswithout the use of surfactants, impeding film-forming using carriersolvents. Furthermore, when nanotubes are suspended or dissolved insolution at low concentrations, evaporation (e.g., drying) of thecarrier liquid may result in flocculation and clumping, when the localconcentration of nanotubes approaches the solubility limit. Moreover,surfactants that make the nanotubes compatible with aqueous dispersionsmay be inappropriate for applications that require pure nanotubes. Undersome situations, nanotubes can be deposited with spin coating, but forthe thinnest films (<1 μm), it is difficult to get adequate uniformity.Strong intertube attractive forces, violent hydrophobicity, and lowsolubility at moderate concentrations all fight against typical wetchemistry techniques to make uniform films.

It is desirable, therefore, to provide flexible nanotube electronicdevices or transistors and methods for making the same that overcomesthe above-described shortcomings while retaining their advantages (e.g.,by providing superior flexible transistors or a better way of makingthem).

SUMMARY OF THE INVENTION

The present invention provides a novel flexible electronic device thatincludes a plurality of nanostructures or nanotubes, and method formaking the same, that overcomes the limitations of the prior art. Thenanostructure or nanotube device can exhibit properties of afield-effect transistor (FET). The device may be used as a diode, logicelement, circuit, resistor, and/or chemical sensor. The device may alsobe modified to be an n-type transistor, p-type transistor, ambipolartransistor, light-emitting diode, and/or physical sensor (e.g., forsensing light or pressure).

An embodiment of the invention provides an electronic device having ananostructure film and a flexible substrate. The nanostructure film issupported by the substrate. First and second conducting elements areelectrically connected to the nanostructure film, and may also besupported by the flexible substrate. The nanostructure film may comprisenanotubes, such as carbon nanotubes disposed along the flexiblesubstrate, such as a organic or polymer substrate. The nanotubes spanthe first and second conductive elements, which may serve as electricalterminals, or as a source and drain. In addition, the flexible substratemay act as or comprise a functionalization layer, such as poly(ethyleneimine) (“PEI”).

The electronic device may also be configured with a gate electrode thatis in proximity to the nanotubes but not in electrical contact with thenanotubes. In this configuration, the device can operate as a transistoror a FET. The device may also be operated in a resistive mode as achemical sensor (e.g., for sensing NH₃). It is further believed thatsimilar nanostructures, for example, using nanorods or nanowires insteadof nanotubes could be constructed, and would exhibit similar qualities.

A method for forming a nanostructure electronic device according to theinvention includes the following steps. A film of nanostructures areformed on a first substrate. The nanostructure film is then transferredto a second substrate that is flexible. Two conducting elements are thenmade to be in electrical contact to the nanostructure film. In addition,a gate electrode may be formed in proximity to the nanostructure film onthe second substrate and not in electrical contact with thenanostructure film.

A more complete understanding of the flexible nanostructure electronicdevice, and method for making it, will be afforded to those skilled inthe art, as well as a realization of additional advantages and objectsthereof, by a consideration of the following detailed description of thepreferred embodiment. Reference will be made to the appended sheets ofdrawings which will first be described briefly.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of an exemplary flexible nanostructuredevice according to the invention.

FIG. 2 is a flow diagram showing exemplary steps of a method accordingto the invention;

FIG. 3 is a flow diagram showing exemplary steps of an alternativemethod according to the invention;

FIG. 4 is an image of a film of nanostructures with metal contactsaccording the invention; and

FIG. 5 shows electrical characterizations between two metal contacts ofa transistor according to the invention; and

FIG. 6 shows sensing capabilities of a chemical sensor according to theinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The present invention provides flexible electronic devices that includea plurality of nanotubes. The devices can exhibit properties of afield-effect transistor (FET). The devices may be used as diodes, logicelements, circuits, resistors, and/or chemical sensors. The devices mayalso be modified to be n-type transistors, p-type transistors, ambipolartransistors, light-emitting diodes, and/or physical sensors (e.g., forsensing light or pressure).

Embodiments of the invention provide nanotube film electronic componentson flexible substrates, or on any other substrate on which it is desiredto lay one or more nanostructures using the methods disclosed herein,for example, on organic substrates. Embodiments of the invention includea flexible electronic device comprising at least one nanotube (or othersuitable nanostructure) on a flexible substrate and an electronic devicecomprising a dispersion of nanotubes (or nanostructures) on a flexiblesubstrate. The devices can include many nanotubes, oriented randomly (oraligned parallel or perpendicular to the surface), as individualnanotubes, or as nanotube ropes. The devices may also include electrodescontacting the nanotube(s) electrically. Advantageously, devices can beconstructed on flexible substrates, and consequently may be flexed,bent, turned, bowed, or twisted without breaking, unlike stiff orbrittle substrates as used in the prior art.

In addition to providing for and/or including nanotube films, films madeof other nanostructures can be used and/or provided. These includenanospheres, nanocages, nanococoons, nanofibers, nanowires, nanoropesand nanorods. A nanotube is a single-walled tubular nanostructure thatcan be made of carbon, germanium, or any other suitable material. Itshould be appreciated that the term “nanotube” as used herein is notgenerally intended to exclude the use of alternative nanostructures,insofar as the embodiments described herein may be modified to make useof alternative nanostructures instead of, or in addition to, nanotubes.Nanostructures, like nanotubes, can be made of many different elementsand compounds. Examples of such materials include carbon, boron, boronnitride, and carbon boron nitride, silicon, germanium, gallium nitride,zinc oxide, indium phosphide, molybdenum disulphide, and silver.

The invention may be used to construct a wide variety of electronicdevices. Examples of electronic devices that may be encompassed by thedisclosed embodiments include a transistor (incorporating a thirdelectrode, the gate electrode); a diode; a logic element; a circuit; aresistor; a chemical or biological sensor; modified to be an n-type,p-type, or ambipolar transistor; a light-emitting diode; or a physicalsensor (e.g. light or pressure).

There are two main types of nanostructure films: networks and mats.Networks are substantially monolayer structures comprised principally ofindividual nanotubes, and are usually best for devices wheresemiconducting properties are desired, such as transistors. Mats aremultilayer structures comprised principally of nanotube ropes, have ahigher density of nanotubes per unit substrate area than networks, andare usually best for resistors (or conductors). Nanotube films encompassboth networks and mats, and thus may be classed as networks, mats, asintermediate between networks and mats, or as composites of networks andmats.

An electronic device can be configured such that, when the density ofnanotubes on the substrate is relatively high, the film of nanotubesacts as a resistor (i.e., a conductive material having essentiallymetallic conduction properties). When the density of nanotubes isintermediate, the film acts as a semiconductor. When the density is low,it does not conduct. When the density of the nanotube film is on theedge of conduction, the device can be a very sensitive sensor.

FIG. 1 shows an exemplary flexible electronic device 100 that includesat least two electrodes 102, 104. If configured as a field-effecttransistor, electrodes 102, 104 may function, for example, as source anddrain electrode, respectively. Electrodes 102, 104 are electricallyconnected with the nanotube(s) 108. Nanotube(s) 108 are supported by aflexible substrate 110 having dielectric properties. A third electrode106 may be positioned underneath substrate 110, so as to be insulatedfrom electrical contact with the nanotube(s) 108. In a field-effecttransistor device, the third electrode 106 may function as a gateelectrode. In FIG. 1, the third electrode 106 is shown to be disposed onor adjacent to a surface of the flexible substrate 110, opposite thesurface supporting the nanotube(s) 108. Electrodes 102, 104, 106 can bemade from any suitable conductive material, for example: metallicfilm(s); conductive polymer(s), in which the conductive polymer(s) are adifferent polymer from the substrate; conductive polymer, in which theconductive polymer is the same polymer as the substrate, but isdifferently doped; conductive nanotube film; and combinations of theforgoing exemplary materials.

The flexible substrate 110 may comprise an organic polymer, but it couldbe some other flexible material, organic or inorganic. For example, theflexible substrate 110 may comprise organic molecules, polymers, porouspolymers, metal oxides, and/or porous metal oxides. Flexible substratesmay be flexed substantially without breaking, as distinct from typicalsemiconductor substrates such as silicon or other semiconductormaterials. Flexibility may be determined by the characteristics of thesubstrate material, as well as by the geometry of the substrate. Theinvention permits devices to be constructed on very flexible substrateshaving the geometric form of a thin film. For example, in someembodiments, flexible substrates for use with the invention may have amodulus of less than about 1 Mbar (i.e. 100 GPa).

In an embodiment of the invention, a polymeric electrolyte, which is anionic conductor, is used as the substrate 110. As such, it can also bethe gate 106 for the nanotube transistor 100 (e.g., the gate comprisesthe substrate that supports the nanostructure network). The flexiblesubstrate 110 can also be porous, such as a porous polymer, and thenanotube film 108 can support itself over the pores. In addition, theflexible substrate can be transparent (e.g., be transparent toelectromagnetic radiation in at least one range of wavelengths or betransparent to light).

The substrate 110 may also comprise a functionalization layer, sometimesreferred to as a recognition layer in the context of a sensor device.Various polymer materials may be selected for use as a functionalizationlayer, some examples of which are provided later in the specification.The functionalization layer may be applied to the nanotube(s) 108 usingany suitable method. For example, in an embodiment of the invention, thesubstrate 110, electrodes 102, 104 and nanotube(s) 108 were submerged ina solution of poly(ethylene imine) (PEI, average molecular weight˜25,000, Aldrich) at about 20% by weight in methanol. After soakingovernight, they were removed and rinsed with methanol. A thin layer,such as less than 10 nm of PEI, coated the exposed portion ofnanotube(s) 108 after rinsing. Other suitable polymers, or combinationsof polymers, may be substituted for PEI. Other solvents and rinse agentsmay also be suitable.

The functionalization layer may serve to change the electricalcharacteristics of a nanotube device (i.e., one lackingfunctionalization layer). For example, prior to PEI coating, an as-madesemiconducting nanotube device can exhibit p-type FET characteristicsbut after addition of the functionalization or PEI layer, the deviceexhibits properties of a n-type FET.

Other polymers that may be used to effect electrical characteristics orconductivity changes in nanotubes can include: poly(4-vinylphenol);poly(styrene-co-allyl alcohol), 5.7% hydroxyl; poly(a-methylstyrene);poly(vinyl chloride-co-vinyl acetate), 10% vinyl acetate; poly(vinylacetate); poly(N-vinylpyrrolidone); poly(carbonate bisphenol A);poly(styrene); poly(styrene-co-maleic anhydride), 50% styrene;poly(sulfone); poly(methyl methacrylate); poly(methyl vinylether-co-maleic anhydride); poly(vinyl butyral); poly(vinylidenechloride-co-acrylonitrile), 80% vinylidene chloride; poly(caprolactone);poly(entylene-co-vinyl acetate), 82% ethylene; and/or poly(ethyleneoxide).

Referring now to FIG. 2, one method 200 of forming flexiblenanostructure electronic devices includes an initial step 201 ofdepositing or growing (for example, by chemical vapor deposition) ananotube film 208 on a rigid substrate 220. Substrate 220 may comprise,for example a silicon material 222 covered by a layer of silicon oxide221. Optionally, contacts 224, 226 may be formed on the substrate,either before or after the nanotube film is formed. At step 202,nanotube film 208 and substrate 220 may be coated with a flexiblesubstrate layer 210. Flexible substrate layer 210 may comprise anysuitable material capable of forming a coating film, for example, aliquid polymer. Suitable materials for layer 210 may include, forexample, polyacrylamide, polyacrylonitrile, polyaniline, polypyrrole,polythiophene, polystyrene, polybutadiene, poly(dimethylsiloxane),polyethylene, polycarbonate, poly(ethylene glycol), poly(ethyleneoxide), poly(ethylenimine), poly(alkyl methacrylate), poly(propylene),polyoxyethylene, polytetrafluoroethylene, poly(vinyl alcohol), and/orpolyvinylpyrrolidone. The polymer should be selected to provide theelectrical and mechanical properties that are desired for the substrateof the device to be formed. The polymer 210 may be deposited as a liquidlayer, and then cured, hardened, or otherwise solidified to provide thedesired substrate material.

At step 203, rigid substrate 220 is removed from substrate 210, forexample, by dissolving the substrate in a suitable etching agent.Optionally, one or more electrodes (not shown) may be formed on theexposed surface of substrate layer 210, either before or after it isremoved from the rigid substrate. For example, a gate electrode (notshown at 203) may be placed opposite to the nanotube film 208. Turningsubstrate 210 over should yield a device 230 as shown at the lower leftof FIG. 2 (shown rotated 180° relative to its position at 201). Thedevice 230 may comprise source and drain electrodes 224, 226, nanotubenetwork 208 connecting the source and drain, and a gate electrode 228 onthe opposite side of dielectric flexible substrate layer 210.

In the alternative, or in addition, nanotubes can be placed on bothsides of a flexible substrate such as substrate 210. This may beaccomplished, for example, by forming a nanotube film on two separaterigid substrates, and coating the substrates with their respectivenanotube films with a polymer as described above. Then, the two rigidsubstrates may be placed together while the polymer is still at leastpartially uncured, and held in place until the polymer layers fuse orblend together. Curing or other solidification of the polymer may becompleted while substrates are held together. Then, the rigid substratesmay be removed as previously described, leaving a single flexiblesubstrate with nanotubes supported on opposing surfaces of a substratelayer or film.

Nanotube network transistors, including nanotube films and at least twoelectrodes, can be fabricated on rigid substrates using conventionalmethods, before being transferred to a flexible substrate as describedherein. The density of the nanotube networks can be controlled bychemical vapor deposition process conditions, as known in the art. Itmay be useful to form densities from just below a percolation threshold(i.e., the density below which there is no conducting path between theelectrodes comprised solely of nanostructures) to just above thepercolation threshold (i.e., having just one conducting path between theelectrodes comprised solely of nanostructures).

Electrodes for connecting to the network, or gate electrodes, caninclude one, two, or more layers. Electrodes may be formed by depositinga layer of titanium onto the rigid substrate, and then depositing alayer of gold over the titanium. These metal layers are later patternedand etched as known in the art to form the desired electrode geometry.

Some portion of the nanotubes making up a network often may exhibitmetallic conduction properties. In such devices, the nanotube densitymay be controlled so as to be below the percolation threshold for themetallic nanotubes in the network. In this intermediate range, theoverall nanotube density should be above the percolation threshold whilethe metallic nanotubes are below the percolation threshold, andtherefore every conducting path contains at least one semiconductingnanotube. Semiconducting nanotubes can be turned on and off using a gatefield. Consequently, in the intermediate range, the network can beturned on and off using a gate field, providing transistor action.

Such network transistors may be removed from the rigid substrate anddeposited on (or in) a polymer substrate, for example, by using method200. Care should be taken to preserve the desired nanotube film densityduring this process. The nanotube films are tenuous and weak, so that itis difficult to peel them off the rigid substrate. One approach mayinclude, for example, coating the rigid substrate with a dissolvedpolymer on the surface that contains the nanostructure film and theelectrodes. The substrate may then be heated to cure the polymer. Whilein its liquid state, polymer may seep around the nanostructures adsolidified in place, thus encasing the nanotubes in a supporting matrix.The rigid substrate may be placed in a chemical or etching solution toremove the rigid substrate. The chemical solution may also remove atitanium layer, if present, leaving a gold layer attached to thepolymer. The polymer with nanotubes and gold electrodes attached may beremoved from the etching solution, thus resulting in a flexible nanotubenetwork transistor. Instead of dissolving the rigid substrate, it maysometimes be possible to peel the polymer with the nanostructures andthe electrodes attached off the rigid substrate.

Flexible nanostructure electronic devices may also be formed bydepositing nanotubes on a substrate using a quasi-Langmuir-Blodgetttechnique 300, as diagrammed in FIG. 3. In general, the method 300 maybe used to prepare a uniform nanotube film 308 by deposition fromsolution onto a porous filter, substrate or membrane 320 (e.g., aalumina, cellulose, cellulose ester, silica, borosilicate,polytetrafluoroethylene, polyethersulfone, polysulfone, and/or nylonmembrane). At step 301, the nanotubes are suspended or dissolved in acarrier liquid or solvent, which is chosen to have a density less thanthe density of water. For example, a suitable liquid or solvent maycomprise DmbDcb (1,2-dimethylbenzene(ortho-xylene) and1,2-dichlorobenzene), 1,3-dichlorobenzene, chlorobenzene, and/or carbondisulfide. The ratio of 1,2-dimethylbenzene(ortho-xylene) to1,2-dichlorobenzene may be, for example, between about 1:1 and 100:1. Inthe alternative, the ratio may be between about 5:1 and 15:1. Droplets312 (one of many shown) of the solvent/nanotube suspension may bedropped onto the filter 320. At step 302, the carrier liquid quicklypasses through filter 320, forming a raft 308 of nanotubes. Each droplet312 may contain enough nanotubes for a single raft, or multiple dropletsmay be used to form a single raft. The concentration of nanotubes indroplets 312 may be, for example, between about 1 mg/L and 15 mg/L or 1mg/L and 5 mg/L. The membrane 320 may comprise a porous alumina membranewith a pore size between about 0.05 μm and 5.00 μm or about 0.2 μm.

In an embodiment of the invention, the membrane itself may be used as asupporting substrate, with or without providing an additional layer offlexible material as a functionalization and/or structural material. Forsuch embodiments, the desired electrodes may be formed on membrane 320either before or after step 302. Desired functionalization or supportinglayers may then be deposited over or adjacent to the raft of nanotubes308. In this embodiment, the diagrammed steps 303-306 do not apply.

Referring again to FIG. 3, at step 303 the filter 320 may be immersed ina solvent (not shown) which suspends nanotubes effectively, causing raft308 to be loosened from filter 320. Next, the filter the loosened raftmay be carefully immersed in water or other suitable liquid having aspecific gravity greater than the nanotube raft. For example, de-ionizedwater may be used as a principal constituent. The nanotube film 308should float to the top surface of the suspending liquid 330, which maycomprise water, a combination of water and solvent, or other suitableliquid. At step 304, the filter 320, free of the raft 308, may beremoved from the suspending liquid, leaving the raft floating in theliquid 330. At step 305, the removed filter may be replaced with asubstrate 310 of choice, such as a flexible substrate or an organicsubstrate. Subsequently, the liquid 330 is removed, and the substrate310 is dried, leaving the nanotube film 308 on the flexible substrate310. Electrodes (not shown) can be added to complete the device. In thealternative, the electrodes may be disposed on the substrate 310 beforethe nanotube film 308 is transferred to the substrate 310. Additionallayers of flexible material (not shown) such as functionalization orsupporting layers, may be subsequently deposited over or adjacent to thenanotubes 308.

In the alternative to method 300, a flexible film having an adhesiveouter surface can be pressed or placed against the rafts of nanotubes onthe filter, and then peeled off, taking the nanotube film with it.Electrodes can be added to complete the device. It may be more difficultto avoid damaging delicate nanotube networks using this alternativemethod.

The following examples provide further details concerning films ofuniform nanostructures or nanotubes, and methods for making them, inaccordance with the invention.

Example A

A nanotube network was grown by chemical vapor deposition on a siliconsubstrate with a 200 nm silicon oxide coating, as described in U.S.patent application Ser. No. 10/177,929, filed Jun. 21, 2002 by Gabrielet al., which is hereby incorporated by reference, in its entirety. Thenthe silicon substrate with the network was patterned with opticallithography, and a liftoff process, to form 100 μm square metalcontacts. The metal contacts comprised a 3.5 nm thick titanium filmcovered by a 50 nm thick gold film. After liftoff, the silicon substratewith network and metal contacts was spin-coated with polyimide (HD 2610,500 rpm). The silicon substrate was heated at 90° C. for 10 minutes,120° C. for 5 minutes, and 200° C. for 30 minutes to cure the polyimide.Finally, the silicon substrate was immersed in 10% hydrofluoric acid(HF) for 8 hours. The polyimide films, floating freely in the HFsolution, were removed and rinsed with deionized water.

A device on a flexible substrate 400, resulting from a process such asthe foregoing, is shown in FIG. 4. Multiple electrodes such as electrode401 were patterned on substrate 400. Nanotube networks connected sourceand drain electrodes, and were opposite a gate electron of the oppositeside of film 400. The film 400 was inspected using a microscope, andsuitably configured field-effect transistor device were selected forelectrical testing.

FIGS. 5 and 6 show exemplary electrical properties achieved for afield-effect transistor device on a flexible substrate. FIG. 5 shows adecrease in conductivity with increasing voltage. Between −100V and+100V, a modulation of approximately 25% was observed for one device.Higher gate voltages (i.e., higher than 100V) may be able to modulatecompletely (i.e., to turn completely off a FET constructed by thepresent exemplary embodiment). FIG. 7 shows the NH₃ sensing capabilitiesof a chemical sensor constructed using a flexible field-effecttransistor. Introduction of NH₃ to a test chamber caused a rapid andeasily measured change in conductivity of the device.

Example B

A nanotube solution was made using nanotubes grown by laser ablation. Tomake the solution, nanotubes were dispersed in 10:1dimethylbenzene:dichlorobenzene solution using a high-poweredultrasonicator. The concentration of nanotubes was between 1 mg/L and 5mg/L. The solution was placed on an alumina membrane (Whatman, 0.2 μmpore size), and a pump was used to draw the solvent through themembrane. A uniform nanotube film was found deposited on the membrane.While the membrane was still damp with solvent, a chamber underneath themembrane was filled with deionized water. When the water reached themembrane, the nanotube film was observed to float free of the membrane.The film floated on the water surface in the form of large rafts. Atthis point, the device substrate was slipped into the water under therafts, then the pump was used to remove the water. As the waterdisappeared, the rafts were redeposited on the substrate.

The invention has been described herein in considerable detail toprovide those skilled in the art with information relevant to apply thenovel principles and to construct and use such specialized components asare required. However, it is to be understood that the invention can becarried out by different equipment, materials and devices, and thatvarious modifications, both as to the equipment and operatingprocedures, can be accomplished without departing from the scope of theinvention itself. For example, a nanotube device has been illustrated,but it should be apparent that the inventive concepts described abovewould be equally applicable to devices that incorporate othernanostructures, such as nanorods, nanofibers or nanowires. The inventionis further defined by the following claims.

What is claimed is:
 1. An electronic device, comprising: a flexiblesubstrate; a film of nanostructures supported by the flexible substrate;and a first conducting element in contact with the film ofnanostructures, wherein the film of nanostructures comprises athree-dimensional, multiple-layer mat of nanostructures.
 2. The deviceof claim 1, further comprising a gate electrode in proximity to the filmof nanostructures and not in electrical contact with the film ofnanostructures.
 3. The device of claim 2, wherein the gate electrodecomprises a conductive nanostructure network.
 4. The device of claim 1,wherein the electronic device is selected from the group consisting oftransistors, chemical sensors, biological sensors, light sensors,pressure sensors, diodes, logic elements, circuits, resistors, andlight-emitting diodes.
 5. The device of claim 1, wherein the flexiblesubstrate is selected from the group consisting of organic molecules,polymers, porous polymers, metal oxides, porous metal oxides.
 6. Thedevice of claim 1, wherein the flexible substrate is transparent toelectromagnetic radiation in at least one range of wavelengths.
 7. Thedevice of claim 1, wherein the film of nanostructures comprises at leastone nanostructure selected from the group consisting of nanotubes,nanospheres, nanocages, nanococoons, nanofibers, nanowires, nanoropesand nanorods.
 8. The device of claim 1, wherein the film ofnanostructures is uniform.
 9. The device of claim 1, further comprisingsecond conducting element in contact with the film of nanostructures.10. The device of claim 1, wherein the film of nanostructures hasessentially metallic conduction properties.
 11. The device of claim 1,wherein the film of nanostructures has essentially semiconductingconduction properties.
 12. The device of claim 1, wherein the film ofnanostructures is on a surface of the substrate.
 13. The device of claim1, wherein the film of nanostructures is within the substrate.
 14. Thedevice of claim 1, wherein the first conducting element is an electrode.15. The device of claim 14, wherein the electrode comprise at least onemetal selected from the group consisting of transition metals andaluminum.
 16. The device of claim 9, wherein the first conductingelement and the second conducting element comprise conductivenanostructure networks.
 17. The device of claim 1, wherein the flexiblesubstrate comprises an organic substrate.
 18. The device of claim 1,wherein the flexible substrate comprises a polymer substrate and thefilm of nanostructures comprises a film of carbon nanotubes.